, o ne. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 STP25N06 STP25N06fi n- channel enhancement mode power mos transistor type STP25N06 STP25N06fi vdss 60 v 60 v ros(on) < 0.065 ii < 0.065 n id 25 a 16 a typical rds(on) = 0.048 q avalanche rugged technology 100% avalanche tested repetitive avalanche data at 100c low gate charge high current capability 175c operating temperature application oriented characterization applications high current, high speed switching solenoid and relay drivers regulators dc-dc & dc-ac converters motor control, audio amplifiers automotive environment (injection, abs, air-bag, lampdrivers, etc.) to-220 isowatt220 internal schematic diagram 0(2) 0 (1) absolute maximum ratings symbol vds vdgr vgs id id !dm(.) plot viso tstg tj parameter drain-source voltage (vgs = 0) drain- gate voltage (ros = 20 kti) gate-source voltage drain current (continuous) at tc = 25 c drain current (continuous) at tc = 100 c drain current (pulsed) total dissipation at tc = 25 c derating factor insulation withstand voltage (dc) storage temperature max. operating junction temperature value STP25N06 STP25N06fi 60 60 + 20 25 17 100 90 0.6 ? 16 11 100 40 0.27 2000 -65 to 175 175 unit v v v a a a w w/c v c c (?) pulse width limited by safe operating area quality semi-conductors
STP25N06/fi thermal data rthj-case rthj-amb rthc-sink ti thermal resistance junction-case max thermal resistance junction-ambient max thermal resistance case-sink typ maximum lead temperature for soldering purpose to-220 1.57 isowatt220 3.75 62.5 0.5 300 c/w c/w c/w c avalanche characteristics symbol iar eas ear iar parameter avalanche current, repetitive or not-repetitive (pulse width limited by t, max, 5 < 1%) single pulse avalanche energy (starting tj = 25 c, id = iar, vdd = 25 v) repetitive avalanche energy (pulse width limited by t, max, 8 < 1%) avalanche current, repetitive or not-repetitive (tc = 100 c, pulse width limited by tj max, 6 < 1%) max value 25 100 25 17 unit a mj mj a electrical characteristics (tease = 25 c unless otherwise specified) off symbol v(br)dss loss igss parameter drain-source breakdown voltage zero gate voltage drain current (vcs = 0) gate-body leakage current (vos = 0) test conditions !d=250jia vgs=o vds = max rating vds= max rating x 0.8 tc=125c vgs = 20 v min. 60 typ. max. 1 10 + 100 unit v ha ha na on(*) symbol vcs(th) rds(on) ld(on) parameter gate threshold voltage static drain-source on resistance on state drain current test conditions vds=vgs id=250ha vgs = 10v b= 12.5 a vds > id(oh) x rds(on)max vgs= 10 v min. 2 25 typ. 2.9 0.048 max. 4 0.065 unit v ii a dynamic symbol 9fs (*) ciss coss crss parameter forward transconductance input capacitance output capacitance reverse transfer capacitance test conditions vds > b(on) x ros(on)max id = 12.5 a vds= 25 v f = 1 mhz vgs= 0 min. 7 typ. 11 700 320 90 max. 900 450 150 unit s pf pf pf
STP25N06/fi electrical characteristics (continued) switch ing on symbol td(on) tr (di/dt)on qg qgs qgd parameter turn-on time rise time turn-on current slope total gate charge gate-source charge gate-drain charge test conditions vdd = 30v id=3a rg= 50 q vqs = 10 v (see test circuit, figure 3) vdd = 40v id =25 a rg = 50 n vgs = 10 v (see test circuit, figure 5) vdd = 40 v b =25 a vgs=10v min. typ. 30 90 230 26 8 9 max. 45 130 40 unit ns ns a/u,s nc nc nc switching off symbol tr(voff) tf te parameter off-voltage rise time fall time cross-over time test conditions vdd = 40v id =25 a ro=50ii vgs = 10v (see test circuit, figure 5) min. typ. 80 80 170 max. 120 120 250 unit ns ns ns source drain diode symbol isd isdm(') vsd(*) trr qrr irrm parameter source-drain current source-drain current (pulsed) forward on voltage reverse recovery time reverse recovery charge reverse recovery current test conditions isd = 25 a vgs = 0 isd = 25 a di/dt = 100 a/u.s vdd = 30v tj=150c (see test circuit, figure 5) min. typ. 80 0.22 5.5 max. 25 100 1.5 unit a a v ns u.c a (*) pulsed: pulse duration = 300 us, duty cycle 1.5 % (?) pulse width limited by safe operating area safe operating areas for to-220 ib (a) safe operating areas for isowatt220 10 10 10 10 ee2???o s r <* j^ /s- ? ^ k ope ^ "^ ratiok c" \ v s 10, 10 ja & .1 10ms m 3n .1 4 ? ? ? i 411.2 ill. i 'ib 1ct1 10 101 10z vm(v) in (a) 4 12. 4 101. 4 10. 4 1 m'1 / r / v ^ & f~ :f ii d.c. l ; y= v ' ? ? 5 ^' ope ? > ^ , ^ '? s. ^ >s nation ? > ^ \ ? \ ^, in u ^ 9 m on id'1 10 5 411, i 411. f 4 1. f 411 \o' vm (v)
|
